? 2002 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c70a i c90 t c = 90 c45a i cm t c = 25 c, 1 ms 150 a ssoa v ge = 15 v, t vj = 125 c, r g = 22 ? i cm = 100 a (rbsoa) clamped inductive load @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 s (scsoa) r g = 22 ?, non repetitive p c t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min leads-to housing 2500 v~ maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 5g v ces = 600 v i c25 = 70 a v ce(sat) = 2.6 v t fi(typ) = 150 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 3 ma, v ge = 0 v 600 v v ge(th) i c = 4 ma, v ce = v ge 48v i ces v ce = 0.8 v ces t j = 25 c 350 a v ge = 0 v t j = 150 c5ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i t, v ge = 15 v 2.6 v 98889 (1/2) igbt with diode isoplus 247 tm (electrically isolated backside) short circuit soa capability ixsr 50n60bu1 features dcb isolated mounting tab meets to-247ad package outline high current handling capability latest generation hdmos tm process mos gate turn-on - drive simplicity applications uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies ac motor speed control dc servo and robot drives dc choppers advantages easy assembly high power density very fast switching speeds for high frequency applications isoplus 247 tm g c isolated backside* e 153432 e g = gate, c = collector, e = emitter * patent pending preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixsr 50n60bu1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i t ; v ce = 10 v, 16 23 s i c(on) v ge = 15 v, v ce = 10 v 210 a c iss 3850 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 440 pf c rss 50 pf q g 167 nc q ge i c = i t, v ge = 15 v, v ce = 0.5 v ces 45 nc q gc 88 nc t d(on) 70 ns t ri 70 ns t d(off) 150 300 ns t fi 150 300 ns e off 3.3 6.0 mj t d(on) 70 ns t ri 70 ns e on 2.5 mj t d(off) 230 ns t fi 230 ns e off 4.8 mj r thjc 0.50 k/w r thck 0.15 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i t, v ge = 0 v, 1.8 v pulse test, t 300 s, duty cycle d 2 % i rm i f = i t, v ge = 0 v, -di f /dt = 480 a/ s1933a t rr v r = 360 v i f = 1 a; -di/dt = 200 a/ s; v r = 30 v 35 50 ns r thjc 0.75 k/w inductive load, t j = 25 c i c = i t, v ge = 15 v v ce = 0.8 v ces , r g = 2.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i t, v ge = 15 v v ce = 0.8 v ces , r g = 2.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g isoplus 247 outline dim. milli meter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection note: 1. i t = 50a see ixsk50n60bd1 data sheet for characteristic curves.
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